Bias effects on the electro-optic response of Ge-on-Si waveguide photodetectors

We compare measurements and three-dimensional multiphysics simulations of the electro-optic frequency response of two vertical-pin-junction Ge-on-Si waveguide photodetectors at different bias voltages. The very good agreement observed even with no applied bias is promising towards the optimization of WDPs for operation in near-zero-bias conditions.