AlxIn1-xAsySb1-y digital alloy nBn photodetectors

The n-barrier-n (nBn) photodetectors, fabricated from
$Al_{03}InAsSb/Al_{0.7}InAsSb$
digital alloy exhibiting near-zero valence-band offset, have achieved specific detectivity of
$1.7\times 10^{10}$
Jones at room temperature, and dark current density of
$3.09\times 10^{-3}$
A/cm
²
at bias of
$-0.5V$
and RoA of
$3724.0\ \Omega cm^{2}$
at 300 K.