Combined Process Simulation and Emulation of an SRAM Cell of the 5nm Technology Node

Fast geometric process emulation models were combined with sophisticated physical simulations on a common simulation platform. In order to show the capabilities of this approach, an entire SRAM cell was generated with process specific features in the source and drain regions, which can be used to study the process-aware resistance and capacitance characteristics of the circuit. Therefore, we have shown that using this approach, even sophisticated physical models can be used to simulate the fabrication of complex devices within a matter of minutes. The simulation flow presented here was carried out in less than 16 minutes on a consumer desktop computer.