TCAD Comprehensive Silicon Strain Model Using Finite Element Quasi-Fermi Discretization

In this work we present a finite element quasi-Fermi implementation of a generalized first principles strain model for silicon. Strain effects in silicon are often modeled with separate mobility, bandgap, density of states, piezo-Hall, temperature, and doping models. The current work encompasses these effects by utilizing first principles and the finite element quasi-Fermi method to write a conductivity tensor with the appropriate carrier relationships.