A Sub-kBT/q Dirac-source Graphene Nanoribbon Field-effect Transistor

A sub-k
B
T/q Dirac-source (DS) graphene nanoribbon FET has been studied using a coupled mode-space non-equilibrium Green function solver employing $k \cdot p$ electronic structures. A 13 dimer wide armchair graphene nanoribbon (13-AGNR) FET connected to a semimetallic 162-AGNR source contact is simulated to study the physics of a proposed DSFET design. Density-of-states filtering at the source contact is explored by shifting its Fermi level via variations on doping concentration. An optimized design achieves a minimum subthreshold swing (SS) of 42 mV/dec and sub-60mV/dec operation across three orders of I
D
magnitude.