Comparative Study Between Conventional and Wave Planar Power Mosfets

One of most challenges of nanoelectronics area is to further increase the integration capacity and electrical performance of Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs). Several approaches have been done to reach this challenges, as for instance, the use of different fabrication processes, new transistors structures (bi and tridimensional), new materials etc. An alternative strategy, in which it is capable of reducing the total die area, mainly of the analog Complementary MOS (CMOS) integrated circuits (ICs), without affecting their electrical performance, is the use non-standard gate geometries (Diamond, Octo, Ellipsoidal, Fish, Wave etc.) for MOSFETs, instead of the rectangular one commonly used today. Previous studies have shown that by using Wave MOSFETs as a basic cell of the Planar Power MOSFETs (PPM) was able to reduce their total die areas. Therefore, the motivation of this paper is to verify by experimental data, the electrical behavior of PPM implemented with Wave layout style in relation to the one of PPM layouted with the conventional rectangular MOSFETs. The CMOS ICs technology used to manufacture these devices was of 350nm-ON Semiconductor. The main finding of this work is that the Wave MOSFET used as a base cell of a PPM (Wave PPM) present a similar electrical characteristics, but it is responsible to reduce in 9.7% its die area in comparison to the one found in PPM layouted with conventional MOSFETs and therefore, the Wave layout style is an alternative layout to reduce the total die area of PPM.