A 0.6-V VDD, 3.8-dB Minimum Noise Figure, 19.5-62.5-GHz Low Noise Amplifier in 28-nm Bulk CMOS

This paper presents a millimeter-wave (mmWave) ultra-wideband low-power low noise amplifier (LNA) that supports the entire 5G FR2 (24.25-52.6 GHz) and beyond. An auxiliary amplifier is exploited to extend the bandwidth with the required input return loss (S11) and high matching gain for suppressing noise of subsequent stages. In addition, gain peaking at the low/mid band (< 30/30-45 GHz) and impedance matching at the high band (> 45 GHz) are used jointly to increase the operating frequency range. Furthermore, large-valued inductors with high self-resonant frequencies (SRFs) are achieved through a cascode spiral structure. This LNA is fabricated in a 28-nm bulk CMOS technology. At a 0.6-V supply voltage (V
DD
) applied on the main stages, this LNA achieves an 18.4-dB flat power gain, a 3.8-5.7-dB noise figure (NF), and a < −6-dB S
11
over 19.5-62.5 GHz (BW
3dB
) while consuming 13.7 mW. This LNA occupies 0.25 mm
²
and features ESD protection.