Assessing the Presence of Parasitic Turn On in SiC Mosfet Power Modules

Parasitic turn on (PTO) in multichip SiC power modules can be substantially different and more complex than in single chip or discrete components. In this paper we propose a careful extension of the classical double pulse tests, introduce new quantitative MOSFET and Body Diode metrics, and combine these with static characterization data, in order for the user to decide whether a given SiC power module when driven with a certain gate driver scheme experiences PTO or not.