Design Evaluation of Medium-Voltage and High-Power Modularized DC/DC Converters with SiC MOSFETs

This paper investigates the efficiency, performance, and design complexity of medium-voltage and highpower modularized dual active bridge (MDAB) converters employing high-voltage SiC MOSFETs and operating at high switching frequencies. The modelling of switching transients in terms of various time intervals for SiC MOSFET power modules rated at 3.3 kV and 750 A are presented and compared with experimental switching data. Based on these evaluations, the minimum deadtime intervals and maximum theoretical switching frequency of 3.3 kV SiC MOSFETs employed in MDAB converters are estimated.