Electrical Properties of Prepared by Spray Pyrolysis FTO/n-CdTe Heterojunction

The conditions for the production of isotype FTO/n-CdTe heterojunctions by spray pyrolysis of SnO
2
:F (FTO) thin films on n-CdTe crystalline substrates have been studied. The mechanisms of electron motion through the energy barrier of the heterojunction are analyzed according to the temperature dependences of the I-V characteristics. Based on the C-V characteristics, the role of the high-impedance layer in electronic processes at the heterojunction is established. The model of the energy diagram of the heterojunction is presented.