Fabrication, Study of Electrical Properties, and FTIR Spectroscopy of the Al/Al2O3/Si Device

Thin film of Al
2
O
3
was deposited on the p-Si substrate using thermal evaporation method to deposit Al on p-Si. Furthermore, a chemical vapor deposition method (CVD) was used for the oxidation of Al/p-Si in order to synthesize Al
2
O
3
/p-Si structure. The paper is focused on the formation of Al
2
O3, the bands of Al-O and some bands formed with it through growth operation by analyzing spectra of the Fourier transform infrared (FTIR) spectroscopy. The bands of the Al-O were found at the wavenumber 611 cm
^-1
, which indicates that Al
2
O
3
has been formed. Also SiO
x
band was found at the wavenumber 1000-1100 cm
^-1
, which refers to the construction of a thin interfacial oxide layer between the Si and the Al
2
O
3
layer and other bands. The current-voltage (I-V) characteristics showed that a reverse leakage current was greater than the forward leakage current. The capacitance-voltage (C-V) measurements were also performed on the samples, revealing the improvement of results.