Simulation Research on Electromigration of BGA Devices

This paper aims to investigate the atomic migration voids formation and time-to-failure mechanism of Ball Grid Array (BGA) device. In order to analyze the parameter changes of BGA device, the actual model and corresponding equivalent model are established by using ANSYS Workbench software. In this study, the effect of various migration forces on atomic migration is determined, while the migration divergence calculated by migration force predicts the failure time of solder joints. Conclusions are made that the solder joints at the corners failed faster than those in the center, and migration caused by current crowding is the major reason for atomic migration, stress migration accelerates the process and thermal migration has little effect.