A thermal network model for thermal analysis in automotive IGBT modules

With the developing of insulated gate bipolar transistor (IGBT), a method to accurately solve the detailed problems caused by thermal behaviors in different locations and layers of automotive IGBT modules is necessary. The paper proposes an RC thermal network for automotive IGBT modules. The thermal effects are modeled among chips and key layers. And particularly boundary conditions are considered, including the heat dissipation conditions. It is demonstrated that the model makes it possible to estimate temperature quickly and accurately of automotive IGBT modules in the real normal running conditions. Compared with the results of finite-element-based simulation and infrared temperature measurement, the proposed thermal model is verified.