A 3D-MEMS Based Architecture for CS-CMOS Heterogeneous Integration

Integration of high performance III- V compound semiconductor circuits with CMOS provides optimum performance and compact size for RF modules. A 3D-MEMS based architecture is presented in this paper to integrate compound semiconductor devices with CMOS circuits. Devices made by different materials can be integrated in a 3-interposer stacked configuration. The 3D-MEMS based architecture is suitable for RF modules up to 40GHz. Maximum module size supported is up to 30 mm by 30 mm, providing enough design flexibilities for complex circuit functionality.