Design of a 120GHz Doubler based on AlGaN/GaN Schottky diode

Compared with Gallium Arsenide material, GaN device has better power endurance characteristics, and hence has great potential in the development of high power source. This paper proposes a heterojunction structure of GaN Schottky diode to improve the electron mobility of the device, and the cut-off frequency is over 250 GHz. Furthermore, a 120 GHz doubler is designed based on the proposed device. The simulated result shows that the conversion efficiency reaches 15% when the input power is 1 W.