A 220 GHz High-Efficiency Active Frequency Tripler With InP HEMTs For Millimeter-Wave/Terahertz Applications

This paper presents a high RF efficiency active frequency tripler based on InP HEMT technology. A common-source transistor stage with input and output matching circuits is used to produce the third harmonic in this active tripler. The chip achieves a peak RF power efficiency of 81% with the input power of 9.4 dBm at 220.2GHz and achieves an RF conversion efficiency of 60% from 212.4 to 230.3 GHz.