TCAD Study of THz Rectification Process in JLFET

The mechanisms of THz rectification performed by the JLFET detector are studied by TCAD simulations, in the light of the self-mixing model. Results show a new picture of the device functioning giving a new description of measured response. The achieved comprehension of the interaction of the radiation with the silicon structure, offers a new possible approach to detection through the gate capacitance charging, in addition to the standard drain voltage measurement.