235GHz Low insertion loss Modulator in InP HEMT technology

This paper describes the design of a wideband modulator using 90nm InP HEMT technology. The on-off effect of the modulator is controlled by the two-dimensional electron gas concentration in the HEMT. It is demonstrated that the insertion loss is less than 5 dB, minimum isolation on the off state is 24dB over 227~241GHz.