Conductance modulation in Al/SiO2/n-Si MIS resistive switching structures

In this work, we discuss the small-signal conductance modulation in the Metal-Insulator-Semiconductor structure. We present the DC measurement results of Al/SiO2/n++-Si device exhibiting resistive switching phenomena. We show that the application of millisecond voltage pulse train results in conductance modulation. Furthermore, we show conductance modulation effect obtained with other bias schemes.