On the Asymmetry of the DC and Low-Frequency Noise Characteristics of Vertical Nanowire pMOSFETs with Bulk Source Contact

In this work, the impact of switching the source and drain on the low-frequency noise of Gate-All-Around (GAA) Vertical Nanowire (VNW) pMOSFETs with a bulk silicon source contact is investigated. As shown, significantly lower 1/f noise is observed in reverse operation compared with the normal forward configuration. Considering the mobility fluctuations origin of the 1/f noise, this indicates a pronounced impact of the choice of the source/drain contact on the conduction in the silicon nanowire. On the other hand, little effect has been found from the doping density in the NWs.