An artificial synaptic thin-film transistor based on 2D MXene–TiO2

MXenes, a new class of two-dimensional transition metal carbides and nitrides, has the potential as a floating gate in storage devices due to its inherent characteristics such as two-dimensional structure, high density of states and high work function. Based on synthetic MXene and TiO
2
generated by surface oxidation, this study used a low-energy, pollution-free and low-cost aqueous solution method to fabricate artificial synaptic thin-film transistors. Moreover, we tested its synaptic properties under light stimulation. Successful simulations include excitatory postsynaptic current, spike number dependence plasticity, spike frequency dependence plasticity and spike width dependence plasticity, and proposed a potential application: high-pass filter. This MXene-based artificial synaptic device serves as a data storage medium to inspire the application of future storage devices.