Evaluation and Analysis of Commercial 1200V Rated SiC Diodes with SEBO (Single-Event Burnout) Radiation Test Equipment

Neutron induced single event failure mechanism in commercial SiC Schottky diode was researched with Single-Event Burnout(SEBO) radiation test equipment and precise fluence correlation and correction system. To evaluate and quantify the diode immunity to terrestrial neutron, we derived 50% fail fluence, the slope of the fail rate versus the fluence of each device and voltage acceleration factor. Moreover, physical analysis was conducted on SiC to verify the result of SEBO.