Thermal boundary conductance of Si/Ge interface by anharmonic phonon non-equilibrium Green function formalism

Understanding heat transport at solid-solid interface is crucial for both the fundamentals of thermal science and the engineering applications such as thermal management in semiconductor devices. The role of anharmonic phonon-phonon scattering at interface has been investigated by the classical molecular dynamics (MD) simulation and also by quantum modeling via the non-equilibrium Green’s function (NEGF) formalism recently. However, the investigations on the role of lattice anharmonicity on heat transport at interface remain inconclusive.