Anisotropic Resistivity ITO Surfaces produced by Laser-induced Self-organization at the Nanoscale

Transparent conducting oxides, such as ITO (indium tin oxide), are key materials in the production of organic light emitting diodes, flat panel displays or photovoltaic devices among others, due to their low absorption within the visible spectrum [1] . Complementarily, ultrafast laser processing is a versatile nanostructuration tool that facilitates the enhancement and/or local modification of the properties of a wide variety of materials [2] . In this contribution, we present the self-organization of ITO films at the nanoscale upon fs-laser infrared irradiation that leads to the generation of highly anisotropic resistivity surfaces [3] .