InGaAs microdisk cavities monolithically integrated on Si with room temperature emission at 1530 nm

III-V semiconductors are ideal for light sources due to their tunable and direct band gap in the telecommunication band [1] , [2] , but their monolithic integration on Si is challenging, because of the significant thermal, polarity and lattice mismatch. At IBM Research we developed template-assisted selective epitaxy (TASE) [3] , [4] , where III-Vs nucleate at a confined Si seed and grow within an empty predefined oxide template. Using TASE, InP whispering gallery mode (WGM) lasers on Si emitting at ~840nm with comparable performance to wafer bonded devices were demonstrated [5] . To fully leverage the potential of integrated photonics, operation beyond the Si absorption edge is desired. Here, we extend TASE to the growth of InGaAs WGM cavities and demonstrate evidence of lasing at 300 K and 1530 nm. We subsequently compare the devices with previously reported InP WGM lasers.