Impact of effective capture cross section on generation-recombination rate in InAs/GaAs quantum dot solar cell

Quantum dot solar cell structures have been theoretically analysed to study the impact of effective capture cross sections on quantum dot generation-recombination processes. The Poisson’s and continuity equation were solved self-consistently to obtain electrostatic potential, electron and hole carrier distribution, and electron filling of the QDs. The occupation probability of the QDs was used to estimate the effective capture cross-sections under different doping and bias condition.