Design of readout circuit chip for medium wave 640 × 512-25um IRFPA

This paper reports a new readout integrated circuit designed for hybridization with P-on-N detector such as InSb, HgCdTe and InGaAs, and it can support a wide range of system through flexibility and versatile functions. This ROIC is fabricated using CSMC 0.18um double poly, six metal process that utilized high-speed CMOS transistors. The device can work at temperatures of 80K with 5.5V supply voltage. It still has a build-in temperature sensor to detect the temperature of the chip. The pixel cell occupies an area of 25×25µm
²
with an input charge-handling of 18Me
^-
carriers. After testing at 80K, the output swing was larger than 3V; the power consumption of chip was about 180mW; the output noise was about 400uV and its dynamic range was about 78dB.