Mid-Infrared Photodetection Enhanced by Localized Surface Plasmon Resonance Assisted NiSi/Si Schottky Photodetectors

Here, inverted-pyramid array structures (IPAS) are applied on NiSi/n-Si Schottky photodetectors to generate surface plasmon resonance and improve the photoresponse in mid-infrared region. Consequently, compared with the planar devices, the current response of 8-$\mu$m-period IPAS devices increases 4.08 times in 3.2-$\mu$m light illumination.