Optimization of the Solution-Based Aluminium Gallium Oxide Buffer Layer for CdTe Solar Cells

Here, we introduce Aluminum Gallium Oxide (AlGaOx) buffer synthesized through a solution-based approach which passivates the interface recombination in CdTe thin film solar cells. This paper seeks to optimize the performance of the solution based AlGaOx buffer without the use of copper (Cu). The results indicated that diluting AlGaOx solution with 10ml dimethylformamide (DMF) solvent removes the blocking effect, achieving a maximum device efficiency of 13.3%, similar to the standard device (Cu/Au) efficiency of 13.6%. These implications could help eliminate the need for Cu in the rear contact. Hence, AlGaOx back buffer shows possibility of being used in bifacial and tandem device configuration for CdTe cells.