Morphological Study of Indium Chloride Post Deposition Treated CuInSe2 Thin Films

CuInSe
2
semiconductor thin films were fabricated using a single-stage thermal co-evaporation process. The as-deposited samples were prepared at 400 °C with both Cu-poor and Cu-rich composition before being recrystallized. The process of recrystallization involved a post-deposition treatment by InCl
3
for two different durations (30 min or 60 min) and two different temperature (450 °C or 500 °C). The post deposition treatment resulted in increased grain size. The Cu-rich thin films showed the more effective recrystallization as compared to the Cu-poor films. Similarly, higher temperature and longer time seemed to be more successful at enhancing grain size.