Dopant diffused Si surface passivation by H2S gas reaction and quinhydrone-methanol treatment

Phosphorus (n
⁺
) and boron (p
⁺
) diffused n-type textured Cz Si wafers are passivated by two different methods: gas phase H
2
S reaction and quinhydrone-methanol (QH-MeOH) solution. The dopant diffused surface passivation quality, quantified by saturation current density (J
0
), strongly depends on the diffusion type and the passivation method. H
2
S reaction at 550°C passivates n
⁺
diffused surface as good as state-of-the-art Si oxide/silicon nitride stack (SiO
2
/SiN
X
), while QH-MeOH passivates p
⁺
diffused surface to the same level as state-of-the-art atomic layer deposited aluminum oxide/silicon nitride stack (Al
2
O
3
/SiN
X
).