The Effect of Oxygen Content of ITO Bottom Electrode on Degradation Characteristics of (Pb, La)(Zr, Ti)O3 capacitor

Ferroelectric random-access memory (FeRAM) is one of the promising candidates for future nonvolatile memory devices. High density FeRAM requires more robust electrode material for capacitor reliability to replace Pt or Ir electrodes, especially in the case of small feature. In this study, DC sputtered Sn-doped In
2
O
3
(ITO) was employed for bottom and top electrodes of (Pb,La)(Zr,Ti)O
3
(PLZT) capacitor. The ferroelectric properties of PLZT capacitors with ITO electrodes by sputtering with difficult temperature/O
2
content and subsequent O
2
annealing. The fatigue degradation characteristics were improved by fully oxidized ITO bottom electrode.