High-performance VOx-based memristors with ultralow switching voltages prepared at room temperature

In this work, the Ti/VO
x
/ITO memristors fabricated at room temperature with self-current compliance characteristics are demonstrated. The devices exhibited excellent resistive switching behavior with ultralow programming voltages (as low as 17 mV) and good retention time (>10
⁴
s). In addition, low-power characteristic with 36.72 nW set power (2.16 µA@17 mV) and 2.74 µW reset power (17.1 µA@0.16 V) were obtained in these memristive devices, which makes them promising in the next-generation information storage and computing applications.