Self-rectifying self-limited Resistive switching in Au/Al2O3/FTO Devices

In this paper, filament-based resistive switching of Au/ Al
2
O
3
/FTO device stack is discussed. The proposed device exhibited a self-limited, self-rectified, asymmetric current-voltage characteristic with excellent Roff/Ron ratio >400 and rectification ratio >200. Also, the device has shown good retention(>10
³
) property. Moreover, it has been observed that the device exhibits non-zero crossover characteristics predominantly seen in negatively formed devices, emulating the behavior of a one diode-one RRAM combination. Besides, it is reported that by modulating the input voltage sweeps, we can fine-tune the device characteristics to achieve asymmetric, analog, or digital switching properties to use in desired applications.