Molecular Beam Epitaxy of AlGaN Nanowires for Ultraviolet Light Emitting

In this work, we discuss the molecular beam epitaxial growth of AlGaN nanowires on Si for ultraviolet light emitting. It is found that, although using a relatively low substrate temperature, AlGaN nanowires with different Al contents can still have a reasonably good optical quality. The reduced substrate temperature could favor the development of electrically injected ultraviolet light emitting devices.