Numerical Analysis of Ultrathin TiO2 Photoanode Layer of Dye Sensitized Solar Cell by Using SCAPS-1D

In this paper, the performance of dye-sensitized solar cells (DSSCs) was analyzed using SCAPS-1D simulation. This research focuses on the thickness variation of semiconductor layers between 1 to 50k nm. The complete DSSC structure consists of ITO / TiO
2
/ N719 / REDOX / Pt was used in this works. Four factors influencing the charge transfer between the DSSC layer are semiconductor thickness, operating temperature, doping concentration as well as the effect of neutral, acceptor, and donor defect were also analyzed. Next, the Voc, Jsc, FF, and PCE parameters were examined in each case based on the four factors mentioned above. The simulation results showed that the four factors analyzed are highly influential in improving the efficiency of DSSC. Based on this works, an efficiency of up to 8.14% can be achieved by applying a 50 nm ultra-thin layer of TiO
2
with a doping concentration of 1 × 10
¹⁸
cm
⁻³
.