Low Loss Cu/Co Multilayer Metaconductor Based Band Pass Filter Using Through Fused Silica Via (TFV) Technology

In this work, for the first time we demonstrate a miniaturized band pass filter using the combination of the Cu/Co multilayer metaconductor and the through fused silica via (TFVs) architecture for 5G and millimeter applications. The performance of a 10 paired Cu/Co metaconductor based filter, where the thickness of each Cu and Co metal layer is 150 nm and 25 nm, respectively, is compared with a solid copper counterpart. With the suppression of the skin effect and the eddy current cancellation in the Cu/Co metaconductor, the conductor loss is reduced. The usage of the fused silica substrate with low loss tangent contributes to further RF loss reduction. Nearly 0.3 dB improvement in insertion loss at 28 GHz is observed with the Cu/Co based filter compared to the solid Cu one. Simulations are performed using High Frequency Structural Simulator (HFSS) and the total area of the designed filter is approximately 15.3 mm
²
.