A study on IMC morphology and integration flow for low temperature and high throughput TCB down to $10\mu \mathrm{m}$ pitch microbumps

In this paper full integration flow for a low temperature (150°C) and high throughput die to wafer bonding method is introduced for microbumps pitches down to 10 μm. The impact of Co plating chemistry, Sn thickness, annealing temperature and bump diameter on CoSn3 IMC morphology is studied in detail. Furthermore, the electrical data and cross section SEM images of the bonded samples are shown for 20 μm and 10 μm pitch daisy chains.