A 24.2dBm Full W band GaN Power Amplifier with about 40GHz of Bandwidth

This paper presents the development and performance of a gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifier (PA) covering the full W-band (75-110 GHz). The 4-stage PA, developed using a 100-nm GaN-on-SiC technology, demonstrates a linear gain of more than 15 dB over about 40GHz of bandwidth. Operating in a con-tinuous-wave (CW) mode, it produces a typical output power of 24.2 dBm with power flatness of ± 1 dB over 75-110 GHz. The average power added efficiency is 6.5%. Due to its unique combination of bandwidth, output power and power flatness, this amplifier could be a suitable building block for wideband communication, measurement or phase-arrav systems.