High-k Solution Processed Hybrid Gate Insulators for Amorphous Oxide Thin-Film Transistors and its Temperature and Thickness Dependence

Gate insulators (GI) with high dielectric constant (high-k) ensure high performance and low voltage operation of oxide thin-film transistors (TFT) such as amorphous InGaZnO (a-IGZO). Here, we report that the combination of (BaTiO
_x
), (BTO) nanoparticles (NP) and polysiloxane (PSX) hybrid organic-inorganic material can effectively form a high-k GI at low temperatures. By optimizing the ratio between the BTO NP and the PSX polymer matrix, high mobilities of up to ~30 cm
²
/Vs can be realized with low leakage currents. In this paper, we analyzed both the temperature and thickness dependence of the performance and leakage current of a-IGZO TFTs with high-k hybrid GI having a high BTO NPratio.