Inverted ZnCuInS/ZnS-Based Quantum-Dot Light-Emitting Diodes with Substrate Temperature Variation of Sputtered ZnO Film Layer

Performance of the cadmium (Cd)-free quantum dot light emitting diodes (QLEDs) were investigated using the metallic sputtered ZnO film. Here, a substrate temperature of the ZnO film was changed to improve an electronic properties. Consequently, the maximum current efficiency of 7.91 cd/A, and external quantum efficiency of 4.26% were achieved for the commercially available ZnCuInS/ZnS-based QLEDs at yellow emission.