Study of growth parameters on the well-oriented InxAl1-xN using sputtering on Si (100) substrate

In
x
Al
1–x
N is beneficial for developing full-spectrum devices. The influence of growth parameters including reaction gas ratio, reaction pressure and growth temperature on In
x
Al
1-x
N layers is investigated. We find the growth parameter of well-oriented film is 18sccm N
2
flow rate with 1:3 gas ration, 1Pa pressure and 200℃. The In
0.6
Al
0.4
N film device is fabricated with significant photo-respond and stable current. The saturation time is measured about 0.8~1.0s. Our work is meaningful for improving the photovoltaic properties of In
x
Al
1-x
N devices in the future.