Optimizing the electron leakage of deep ultraviolet laser diode by V-shaped electron blocking layer

A V-shaped electron blocking layer (EBL) was proposed to reduce the electron leakage of the deep ultraviolet laser diode (DUV-LD) in the active region. Three different EBL structures, rectangular, V-shaped, and inverted V-shaped, were simulated. The electron and hole concentration, radiation recombination rate, P-I and V-I characteristics of the three structural devices were analyzed. Compared with rectangular EBL structure, the LD with V-shaped and inverted V-shaped EBL structure have higher carrier concentration and carrier recombination rate, but the output power will decrease slightly, and V-shaped EBL can suppress electron leakage more effectively than inverted V-shaped EBL, thereby improving the photoelectric performance of the device.