Performance Investigation of Nanoscaled GaN-BTG MOSFET for Analog/Linearity and Low Power Applications

This paper presents the comparative study of a proposed device GaN-BTG MOSFET with BTG-MOSFET and CTG-MOSFET in terms of electrical characteristics, analog and linearity parameters by performing simulation using TCAD. The GaN-BTG MOSFET is obtained by modifying a conventional trenched gate structure where GaN is used as the replacement of silicon substrate, having a stacking of silicon dioxide (SiO2) and hafnium dioxide (HfO2) at the gate terminal. The comparative study shows that the GaN-BTG MOSFET is better in terms of transfer and output characteristics and transconductance whereas analog and low-power high-linearity parameters need improvement.