Investigation of RF/Analog Performance of InAs/InGaAs Channel Based Nanowire TFETS

In this paper, Analog/RF performance of InAs/InGaAs channel-based nanowire tunneling field effect transistors (TFETs) have been investigated using TCAD tool. The proposed TFET is designed based on InAs/InGaAs channel using nanowire technology and Z
r
O
2
gate dielectric with 10 nm gate length and 5 nm channel thickness. The device operates on band-to-band tunnelling principle. The objective is to enhance the device performance and to analyze the RF/Analog parameters. Simulations are performed using Silvaco TCAD tool. Different RF/Analog parameters such as maximum oscillation frequency (f
max
), drain current (I
D
), cut off frequency (f
T
), transconductance (g
m
), gate-to-source (c
gs
) and gate-to-drain (c
gd
) capacitance have been analyzed. RF/Analog parameters of InAs/InGaAs channel-based nanowire TFET showed better enhancement over conventional Si-TFET. The presence of InAs/InGaAs channel makes the proposed TFETs highly preferable for low power applications by achieving maximum f
max
and f
T
.