Effect of Static Lifetime and Dynamic Lifetime Test on Reliability of Power Amplifier Chips

The effect of dynamic lifetime test and static lifetime test on the reliability of GaN power amplifier chips has been studied in this paper. The variation in key parametes of GaN power amplifier chips are compared after 1000h static lifetime test and dynamic lifetime test with the same channel temperature of 150
^°
C. The degradation in the saturation output power, drain operating current, and power-added efficiency of GaN power amplifier chips after the dynamic lifetime test were more obvious, compared with the conventional static lifetime test. It may be caused by the influence of radio frequency power during the dynamic lifetime test, which also exists in the real operating condition. It is indicated that the dynamic lifetime test is recommended to evaluate the lifetime of power amplifier chips.