Wide Bandgap Semiconductor-Based Converters for EV and HEV Magnetically Coupled Resonant Wireless Power Transfer

This paper evaluates the feasibility of wide-bandgap semiconductors as a replacement for silicon semiconductors, applied in a full bridge resonant converter for EV and HEV magnetically coupled resonant wireless power transfer, as a way to increase the efficiency of the process. The work consists of a series of simulations to study the impact of different input voltages, switching frequencies, and output load values on the overall efficiency of the system, for three distinct semiconductor technologies: Si MOSFET, GaN transistor, and SiC MOSFET.