TCAD Analysis and Simulation of Double Metal Negative Capacitance FET (DM NCFET)

In this paper, we investigated the double metal negative capacitance field-effect-transistor (DM NCFET) for improved digital and analog performance in comparison to the conventional negative capacitance field-effect-transistor (NCFET) by using a new concept of ferroelectric layer (HfO
₂
FE). Visual TCAD software is used to design DM NCFET. The results have been analyzed in form of leakage current (I
_off
), transconductance (G
_m
), transconductance generation factor (TGF), Early Voltage (V
_EA
), intrinsic gain (A
_v
), unity gain cutoff frequency (f
_T
) and improved performance of output conductance (G
_d
), drain barrier induced lowering (DIBL), switching ratio I
_on
/ I
_off
, subthreshold swing (SS). Thus, DM NCFET can be suitable for digital and analog circuit applications.