Gate - Stack Dual Metal (DM) Nanowire FET with Enhanced Analog Performance for High Frequency Applications

A Gate-Stack dual metal nanowire field effect transistor (4H- Silicon Carbide) is analyzed using ATLAS 3-D device simulator to enhance the analog performance of semiconductor devices for high frequency applications. Gate- Stack dual metal nanowire field effect transistor (4H-SiC) results have been compared with Nanowire field effect transistor, Nanowire field effect transistor having (Silicon Carbide Substrate) and dual metal nanowire field effect transistor (Silicon Carbide) substrate. This is done by introducing a Gate-Stack having high k-dielectric material, Hafnium oxide (HfO
₂
) along with Aluminum oxide (Al
₂
O
₃
) gate dielectric. It exhibits higher drain current I
_ds
, Transconductance (g
_m)
, output conductance (g
_d)
and cut off frequency (f
_T)
. The subthreshold slope obtained for gate -stack dual metal nanowire field effect transistor (4H-SiC) is 63.96 (mV/decade) which is closest to the ideal value as compared to other analogous nanowire field effect transistor which makes it extremely superior for high frequency applications.