GaN-Based Two-Stage Colpitts Oscillator for Wireless Power Transfer

This work investigates the applicability of a two-stage Colpitts oscillator based on GaN high electron mobility transistors (HEMT) for wireless power transfer applications. An inductive load is used both as part of the resonance network in the oscillator and as a power transmitting coil. Simulations and experimental results using commercial GaN transistors are provided.